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High Bandwidth Memory Market - Industry Dynamics, Market Size, And Opportunity Forecast To 2031

Global High Bandwidth Memory Market: By Product (Central Processing Unit, Field-Programmable Gate Array, Graphics Processing Unit, Application-Specific Integrated Circuit and Others); Application (High-Performance Computing (HPC), Networking and Client Space, Data Centers and Others; and Region–Industry Dynamics, Market Size and Opportunity Forecast Until 2031

  • Published Date: Mar-2023  |   Format: pdfpowerpointexcel  |  Report ID: AA0322178  | Delivery: 2 to 4 Hours
INFOGRAPHIC:
High Bandwidth Memory Market

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REPORT SCOPE

Report AttributeDetails
Market Size Value in 2022US$ 292.7 Mn
Expected Revenue in 2031US$ 3,433.8 Mn
Historic Data2017-2020
Base Year2022
Forecast Period2023-2031
UnitValue (USD Mn)
CAGR31.3%
Segments coveredBy Product, By Application, By Region
Key Companies                                                              Advanced Micro Devices, Inc., Samsung Electronics Co., Ltd., SK Hynix Inc., Micron Technology, Inc., Rambus.com, Intel Corporation, Xilinx Inc., Open-Silicon (SiFive), NEC Corporation, Cadence Design Systems, Inc., Other Prominent Players
Customization ScopeGet your customized report as per your preference. Ask for customization

FREQUENTLY ASKED QUESTIONS

High bandwidth memory plays a significant role in data centers, as it fuels analytics engines and help train the next wave of AI algorithms and also solve the challenges of storing, moving and analyzing data rapidly and efficiently.

Global High Bandwidth Memory Market is studied from 2018-2031. 

The growth rate of global high bandwidth memory market is 31.3%, with an estimated value of US$ 3,433.8 Million by 2031. 

North America held the major share in terms of revenue in the global high bandwidth memory market in 2022. 

Factors such as rising need for better speed and greater bandwidth among industries and increasing proliferation of cloud-based solutions drives the growth in the global high bandwidth memory market.

Complications associated with error solving process is a restraining factor which inhibits the growth of the market during the forecast period.

Product, application and region are the different segments of the global high bandwidth memory market.

The data center application segment leads the market in 2022 due to the growing number of data center across the world coupled with increasing demand for fast delivery of information (bandwidth).

The HBM is better than the GDDR as it takes lower power consumption and provides substantially more bandwidth as compared to the GDDR memory which is used in graphic cards for gaming.

UK is expected to project the highest CAGR in the Europe High Bandwidth Memory Market during the forecast period.

End-users such as consumer electronics, automotive and commercial sectors are driving the need for greater interconnection in order to gain new efficiencies by scaling the digital capabilities of their IT infrastructure and reducing costs.

The key players operating in the market include Advanced Micro Devices, Inc., SK Hynix Inc., Micron Technology, Inc., Rambus Inc., Xilinx, Inc., Open-Silicon, Inc., NEC Corporation, Cadence Design Systems, Inc., Intel Corporation and Samsung Electronics Co., Ltd. among others. 

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